| 摘要 |
PROBLEM TO BE SOLVED: To provide the structure of a BiCMOS transistor in which the source/ drain region of a MOS transistor will not be etched excessively, and the manufacture thereof. SOLUTION: A gate electrode upper layer of a MOS transistor, a polycrystalline silicon film to be a base electrode of a bipolar transistor are formed on a polycrystalline silicon film to be a gate electrode lower layer of the MOS transistor. Thereafter, a polycrystalline silicon film 53 which is to be the base electrode of the bipolar transistor and gate electrodes 13, 15 are formed by etching at the same time. Here, since an oxide film acts as a protective film, an n-type well 9 and a p-type well 10 of the active region of the MOS transistor will not be etched excessively.
|
