| 摘要 |
PROBLEM TO BE SOLVED: To prevent the deterioration of electrical properties, without increasing the number of manufacturing steps by making a gate electrode on the side of an NMOS lower than that on the side of a PMOS, and allowing a polysilicon layer or a polycide layer to be included in gate electrode layers on the side of the NMOS and PMOS. SOLUTION: This semiconductor device 100 is provided with a gate electrode 8, made of surface channel type CMOS in which a gate electrode 8' on the side of an NMOS is made smaller in height than a gate electrode 8" on the side of a PMOS. The gate electrode 8' and gate electrode 8" thereon include a polymetal layer or a polycide layer, respectively. Thus, both electrodes can be prevented from being depleted. Furthermore, when the polymetal gate electrode made of surface channel-type CMOS is formed, the through penetration of boron can be suppressed during implantation of ion to the PMOS region, and the deterioration of electrical property of a semiconductor device can be prevented.
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