| 摘要 |
PROBLEM TO BE SOLVED: To attain high density of ion irradiated on a substrate and ion current, and a high throughput of ion irradiation. SOLUTION: This ion irradiation device 1a comprises an ion source, an ion separator by a mass separator electromagnet 4, an ion accelerator by an accelerating tube 5 and a scanning electrode 6. Ions from the ion source are irradiated on a substrate 7. The ion source is any one kind of a high-density plasma ion source of a cathodic arc ion source 2, an ICP ion source, a ECR plasma ion source or a helicon wave plasma ion source. It is desirable that a density of ion irradiation on the substrate 7 is 1017/cm2 or more. A plastic substrate can be used as the substrate 7.
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