发明名称 Apparatus and method for depositing a semiconductor material
摘要 Apparatus (12, 12a) and a method for depositing a semiconductor material on a glass sheet substrate (G) utilizes a distributor (22) including a heated permeable member (24) through which a carrier gas and a semiconductor material are passed to provide a vapor that is deposited as a semiconductor layer on the conveyed glass sheet substrate. The permeable member (24) is tubular and has an electrical voltage applied along its length to provide the heating, and the carrier gas and the semiconductor as a powder are introduced into the tubular permeable member for flow outwardly therefrom as the vapor. A shroud (34) extending around the tubular permeable member (24) has an opening (36) through which the vapor flows for the semiconductor layer deposition. In one embodiment of apparatus (12), the semiconductor layer is deposited on an upwardly facing surface (56) of the glass sheet substrate (G) while another embodiment of the apparatus (12a) deposits the semiconductor layer on a downwardly facing surface (54) of the substrate.
申请公布号 US6037241(A) 申请公布日期 2000.03.14
申请号 US19980026139 申请日期 1998.02.19
申请人 FIRST SOLAR, LLC 发明人 POWELL, RICKY C.;DORER, GARY L.;REITER, NICHOLAS A.;MCMASTER, HAROLD A.;COX, STEVEN M.;KAHLE, TERENCE D.
分类号 C23C16/453;C03C17/00;C03C17/22;C23C14/24;C23C14/56;H01L21/363;H01L21/365;(IPC1-7):C23C16/00 主分类号 C23C16/453
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