发明名称 SEQUENTIAL CIRCUIT USING FERROELECTRIC AND SEMICONDUCTOR DEVICE USING THE CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a nonvolatile sequential circuit or the like which can hold the data despite the cut-off of its power supply. SOLUTION: At an inverter circuit part INV1, a pair of transistors(TR) constructing a conventional CMOS inverter are replaced with the TR NT and PT of MFMIS structures. A ferroelectric layer 32 of the TR NT holds a polarization state corresponding to an ON state and the layer 32 of the TR PT holds a polarization state corresponding to an OFF state respectively even when the power supply of a semiconductor device is cut. When the power supply is applied again, both TR NT and PT are turned on and off respectively according to the polarization states held by each layer 32. Thus, the part INV1 is reset in a state that is held before the power supply is cut when the power supply is applied again.
申请公布号 JP2000077986(A) 申请公布日期 2000.03.14
申请号 JP19980247991 申请日期 1998.09.02
申请人 ROHM CO LTD 发明人 TAKASU HIDESHI
分类号 G11C11/22;G11C19/00;H03K3/356;H03K19/0948 主分类号 G11C11/22
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