| 摘要 |
PROBLEM TO BE SOLVED: To enhance the interfacial matching of a piezoelectric thin film with a lower electrode by a method wherein the lower electrode fulfills the role of a barrier layer to an interdiffusion of atoms in between the piezoelectric thin film and the lower electrode or a substrate. SOLUTION: A lower electrode 302 formed using a conductive oxide film is arranged on a substrate 303 and a piezoelectric thin film 301, which starts a crystal growth form its part coming into contact with the electrode 302 and has crystal nuclei, is formed on the electrode 302. That is, the substrate 303 and the thin film 301 are installed so that the backside of the substrate 303 and the surface of the thin film 301 in an amorphous state are respectively irradiated with an infrared lamp 312 and an infrared lamp 311 using a rapid heat-up lamp annealing device, and the lamp 311 only is irradiated toward the side of the electrode 302, the substrate is fired and crystallized for one minute in an oxygen atmosphere under the condition where the substrate backside is heated up to 900 deg.C, and the electrode 302 is installed so as to fulfill the role of a barrier layer to a diffusion of atoms in between the electrode 302 and the thin film 301. |
