| 摘要 |
In an MIM or MIS electron source that is formed by a first conductive layer 101, an insulating layer 103 that is formed onto said first conductive layer 101, and a second conductive layer 104 that is formed onto said insulating layer 103, wherein a voltage is applied between said first and second conductive layers 101,104, so as to cause a tunneling current to occur in said insulating layer 103, the film thickness of said insulating layer 103 and the film thickness of said second conductive layer 104 are formed so as to be uniform.
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