| 摘要 |
PROBLEM TO BE SOLVED: To obtain a substrate for semiconductor growth which is made of family-III-V nitride-based semiconductor in its major surface, in which a growth layer can be made thin, a shape of a mask edge portion can have no influence on a defect propagation direction of the growth layer, and a probability of gap generation between the growth layer and an inorganic mask can be made very low when traversal epitaxial growth is carried out on the substrate with use of the mask, a method for manufacturing the substrate, and a semiconductor device using the substrate. SOLUTION: A GaN layer 2 is grown on a sapphire substrate 1, an inorganic mask 3 is formed on the GaN layer so that a surface of the GaN layer becomes substantially flat, thereby obtaining a semiconductor growth substrate. The inorganic mask 3 is formed by implanting Si and O or N ions into the GaN layer 2 and then heating it, by implanting Si ions into the GaN layer 2 and then heating it in an atmosphere containing O or N ions, or by selectively forming an Si film on the GaN layer and then oxidizing or nitrifying the Si film. The GaN layer is transversely epitaxially grown on the substrate 1, an element layer is grown on the GaN layer, at which stage a semiconductor device such as a GaN-based semiconductor laser is manufactured. |
