| 摘要 |
PROBLEM TO BE SOLVED: To facilitate a blue colored light emitting diode in excellent crystallization at low operational voltage. SOLUTION: A titanium nitride film 12 and a buffer layer 13 are provided on a low resistant substrate 11 comprising silicon carbide. An n type semiconductor region 14 made of gallium an active layer 15 made of gallium, a p type semiconductor region 16 made of gallium nitride are successively formed on the buffer layer 13. An anode electrode 18 is provided on the p type semiconductor region 16 and, finally, a cathode electrode 19 is provided beneath the low resistant substrate 11. |
