发明名称 |
Intergrated field effect transistor device for high power and voltage amplification of RF signals |
摘要 |
An integrated transistor device operates with a linear triode vacuum tube like characteristic with a very low output impedance and a large interaction between the gate and drain potentials. The drain current of a first transistor is connected directly to the source of a second transistor which has a low input impedance matching the output impedance of the first transistor. The gate of the second transistor is held at a positive potential and functions to provide isolation of the varying drain signal from the drain of the first transistor and to provide a high impedance at the output terminal. This device structure provides high input impedance, high current gain, high output impedance and a linear operating characteristic.
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申请公布号 |
US6037618(A) |
申请公布日期 |
2000.03.14 |
申请号 |
US19980024821 |
申请日期 |
1998.02.17 |
申请人 |
LINEAR INTEGRATED SYSTEMS, INC. |
发明人 |
HALL, JOHN H.;ROUGH, J. KIRKWOOD H. |
分类号 |
H01L27/088;H01L29/808;(IPC1-7):H01L29/80;H01L31/112 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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