| 摘要 |
A method for manufacturing an interconnect. A substrate having a first dielectric layer and a barrier layer formed thereon is provided. A plurality of conductive wires is formed on the barrier layer. A second dielectric layer is formed on the barrier layer exposed by the conductive wires, wherein the second dielectric layer has a surface level between the top surfaces and the bottom surfaces of the conductive wires. A spacer is formed on each portion of the sidewalls of the conductive wires exposed by the second dielectric layer, wherein there is a gap between two adjacent spacers. The second dielectric layer is removed. A third dielectric layer is formed on the conductive wires, the spacer, the sidewalls of the conductive wires and the portion of the barrier layer exposed by the conductive wires and fills the gap to form an air cavity between the conductive wires under the spacer.
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