发明名称 |
SUPERLATTICE AVALANCHE PHOTODIODE |
摘要 |
PROBLEM TO BE SOLVED: To enhance the synthetic performances for a measuring instrument by suppressing the decline in rapidity and high GB (gain band width) product while making feasible of increasing S/N by lowering dark current. SOLUTION: In the case of higher dark current due to the shortened superlattice doubling layer, the specific ionization ratio and the carrier saturation rate are enhanced by the extension of doubling layer. Furthermore, the decline in rapidity and high GB product is suppressed, and the thickness and concentration of a seat doped layer 2 are controlled, thereby making feasible of optimizing the field distribution in the extension of the superlattice doubling layer.
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申请公布号 |
JP2000077706(A) |
申请公布日期 |
2000.03.14 |
申请号 |
JP19980243164 |
申请日期 |
1998.08.28 |
申请人 |
ANRITSU CORP;NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
HIRAOKA ATSUSHI;MIZUNO KAZUO;SHIMOSE YOSHIHARU;KAGAWA TOSHIAKI |
分类号 |
H01L31/107;(IPC1-7):H01L31/107 |
主分类号 |
H01L31/107 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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