| 摘要 |
PROBLEM TO BE SOLVED: To raise the accuracy in patterning a fine element pattern by enabling the conversion difference between the line width of a mask pattern and the dimension of the resist film pattern after etching. SOLUTION: An organic reflection preventive film 3 and a resist film are stacked on a work layer 2 on a substrate 1 having a stack structure, and the resist film is molded into a resist pattern 4 by a photolithography method. With the resist pattern 4 as a mask, the organic reflection preventive film 3 is etched first by a plasma using gas 5 where chloride and oxygen are mixed, and at the point of time when the work layer 2 on the substrate 1 is exposed, etching using only the halogen hydrocarbon gas 6 is performed successively. |
