| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor substrate that solves short-circuiting failure and insulation failure due to the increase in an electric resistance caused by the contact between aluminum and ITO(indium tin oxide) and hillock, and uses aluminum as a wiring material. SOLUTION: In a thin-film transistor substrate, on a substrate 2, base metal films 3 and 10 being made of metal that can be electrically connected to an indium tin oxide film forming the gate terminal 5, the source terminal 12, and the pixel electrode 19, aluminum films 4, 11, and 14 forming gate wiring 5, source wiring 12, and the drain electrode 15, aluminum oxide films 6 and 16, and an insulating film 7 are successively laminated, contact holes 18, 20, and 22 that reach the base metal films 3 and 10 from the surface of the insulating film through the insulating film, the aluminum oxide film, and the aluminum film are formed, the indium tin oxide film is formed on the insulating film and in the contact holes, and the indium tin oxide film formed in the contact hole is electrically connected to the base metal film.
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