| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve both the operation speed and the level of integration by providing a source/drain electrode made of metal silicide and adopting a self-aligned contact without a dry etching stopper film. SOLUTION: A source/drain electrode 10 made of metal silicide is provided to a source and drain 9 in a field effect transistor. Then, a polycrystalline silicon film 4, a metallic gate electrode 5, a cap 6 and an insulation film 8 are formed on an element isolation region 2, forming a dummy gate which does not function as a transistor. The polycrystalline silicon film 4 and metallic gate electrode 5 of the dummy gate are made as a gate-like electrode which does not function as a gate. Thus, the parastic resistance of the source and drain 9 is decreased, resulting in high-speed operation of a MOSFET. Furthermore, the element can be made smaller in area and the arranging pitch be also made small, thereby reducing the parastic capacity and sharply enhancing level integration.
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