| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which allows such a phase pattern arrangement that no gives rise to contradiction in the Levenson arrangement of a phase shifter, even at a part where an island-like wiring electrode pattern and a linear wiring electrode pattern are present, in the same wiring electrode layer formation mask. SOLUTION: With a plurality of common gate electrodes 2 of a selective transistor provided for the pattern of wiring electrodes 4 and 5 of a plurality of signal lines connected to source/drain of each selective transistor to be a Levenson arrangement, adjoining active regions 1 forming each selective transistor are allocated so as to be alternately deviated in pair units. Thus, the Levenson arrangement is allowed for improved pattern density, resulting in a highly-integrated semiconductor integrated circuit device.</p> |
