| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory element produced by a simple manufacturing process and a manufacture thereof. SOLUTION: The manufacture of a nonvolatile memory element includes the steps of forming an oxide film on a semiconductor substrate 31 subjecting the substrate 31 to heat treatment in an atmosphere of NO or N2O to form a gate dielectric film 33a, in which a first silicon oxide nitride region A containing nitrogen and a second silicon oxide nitride region B containing a relatively smaller amount of nitrogen as compared with the first silicon oxide nitride region A are distributed vertically in the oxide film forming a gate electrode 33a on a gate dielectric film 33a, and forming source/drain impurity diffused regions 37, 37a on the surface of the semiconductor substrate 31 of both sides of the gate electrode 35a.
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