| 摘要 |
PROBLEM TO BE SOLVED: To contrive to raise the strength of a thermoelectric conversion element consisting of porous semiconductor layers by a method wherein an inorganic functional fiber, which is used as an insulator, is provided between the P-type porous semiconductor layer and the N-type porous semiconductor layer. SOLUTION: An insulation between a P-type porous semiconductor layer 9 of a conductive form and an N-type porous semiconductor layer 10 of a conductive form is made by an inorganic functional fiber 8, which is used as an insulator, to form a P-N junction part 3. One thermoelectric conversion element is formed of the layers 9 and 10, the insulator 8 and an electrode 6 is installed on the element on the uppermost part on the low-temperature contact part side 5 of a branch end on the opposite side to the high-temperature contact part side 4 of the P-N junction part 3, and the electrode 6 is made to connect with the outside. Moreover, elements, which are formed into the entirely same constitution and respectively consist of semiconductor layers 13 and 14 and an insulator 8, are put separately from each other by the same inorganic functional fibers 15 as one used for the insulation between both semiconductor layers of the element under this one thermoelectric conversion element, and are respectively connected with the upper elements through conductors 12 at the low-temperature contact parts of the branch ends.
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