发明名称 Method for forming air gaps for advanced interconnect systems
摘要 A process for forming air gaps in an interconnect system is disclosed. At least two conductive lines are formed upon a substrate. A low-dielectric constant material (LDCM) is formed between the at least two conductive lines. Formation of the LDCM creates first and second adhesive forces between the LDCM and the at least two conductive lines and between the LDCM and the substrate, respectively. The LDCM is expanded. A dielectric layer is formed onto the LDCM and the at least two conductive lines. Formation of the dielectric layer creates a third adhesive force between the LDCM and the dielectric layer. The LDCM is contracted. Contraction of the LDCM resulting from a fourth force within the LDCM. Each of the first, second, and third adhesive forces are substantially stronger than the fourth force.
申请公布号 US6037249(A) 申请公布日期 2000.03.14
申请号 US19970002124 申请日期 1997.12.31
申请人 INTEL CORPORATION 发明人 CHIANG, CHIEN;FRASER, DAVID B.;OCHOA, VICKY;PAN, CHUANBIN;TZENG, SING-MO H.
分类号 H01L21/764;H01L21/768;(IPC1-7):H01L21/764 主分类号 H01L21/764
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