发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To form a fine pattern in wet etching. SOLUTION: A manufacturing method is at least provided with a process that forms a negative first resist film 3 on a thin film, a process that forms a positive second resist film 4 on the first resist film, a process that uses a mask with a specific pattern and exposes the second resist film, a process that develops the second resist film and eliminates a non-exposed part, a process that uses the remaining part of the second resist film as the mask (M1) with a specific pattern and eliminates the first resist film, and a process that uses the lamination body of the first and second resist films as a mask (M2) with a specific wiring pattern and etches the thin film.</p>
申请公布号 JP2000077667(A) 申请公布日期 2000.03.14
申请号 JP19980243825 申请日期 1998.08.28
申请人 SEIKO EPSON CORP 发明人 IDE KATSUYA;YONEYAMA RYOICHI
分类号 G02F1/1343;G02F1/136;H01L21/306;H01L21/336;H01L29/786;(IPC1-7):H01L29/786;G02F1/134 主分类号 G02F1/1343
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