| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a non-photosensitive semi-amorphous semiconductor by doping oxygen, nitrogen, or carbon to channel forming areas by specific total contents, and to improve the ionizing rate of a donor or acceptor the sources and the drains. SOLUTION: An insulated gate field-effect transistor TFT is made of a non-photosensitive semiconductor material and, particularly, for this purpose, the channel forming areas 7 and 7' of the transistor TFT are made non- photosensitive though the areas 7 and 7' have crystallinity by using silicon to which oxygen, carbon, or nitrogen impurities are selectively doped by a total content of 1×1020 cm-3 to 20 at.%. Then the ionizing rate of a P- or N-conductivity impurity in the sources 5 and 5' and drains 6 and 6' constituting a pair of impurity areas is improved by not doping the impurity to the sources 5 and 5' and drains 6 and 6' or reducing the amount of the impurity doped to the sources and drains. Therefore, the channel forming areas 7 and 7' are made non-photosensitive by doping the impurity to the areas 7 and 7' by specific contents, are the ionizing rate of the donor, etc., is improved in the sources 5 and 5' and drains 6 and 6' by not doping the impurity to the sources and drains.</p> |
