| 摘要 |
PROBLEM TO BE SOLVED: To provide formation method of the wiring of a semiconductor element which can raise the reliability and mass-production of the element by removing fluorine left in a barrier metal layer in the element. SOLUTION: A process of forming a first insulating layer 20 on the upper surface of a semiconductor substrate 10 having an impurity region 11, a process wherein the layer 20 located on the upper surface of the region 11 is removed in such a way that one part of the upper surface of the region 11 is exposed to form a first contact hole 21, a process of forming a first barrier metal layer 30 on the inner side surface of the hole 21 and the upper surface of the layer 20, a process of forming a first metal layer 40 on the upper surface of the layer 30, a process wherein one part of the layer 40 is removed to form a first metal layer plug 41 in the hole 21, and a process of performing a hydrogen plasma treatment and a nitrogen plasma treatment on the exposed part of the layer 30, are conducted in order and the wiring of a semiconductor element is formed.
|
