发明名称 FERROMAGNETIC TUNNEL COUPLING ELEMENT, MAGNETIC SENSOR AND MAGNETIC STORAGE SYSTEM
摘要 PROBLEM TO BE SOLVED: To enable a high variation rate of magnetic resistance by arranging a nonmagnetic material layer between a free magnetic layer and a fixed magnetic layer, arranging a fixed magnetic layer between a magnetic layer and a layer to be fixed, making the nonmagnetic layer into non-conductive, and making the layer to be fixed into an alloy consisting of PtMn alloy as base material. SOLUTION: For a layer 4 to be fixed, above all an alloy consisting of PtMn alloy as base material is selectively adopted among many materials. A non- magnetic layer 2 is arranged between a free magnetic layer 1 and a fixed magnetic layer 3, and the fixed magnetic layer 3 is arranged between the non- magnetic layer 2 and the PtMn layer 4 to be fixed. In order to obtain a tunnel coupling, the non-magnetic layer 2 is a non conductive layer. By using an alloy consisting of PtMn alloy as base material for the layer to be fixed, PtMn is able to apply a sufficiently enough big switched connection magnetic field to the fixed magnetic layer even without using a substrate layer such as NiFe, two layered film of NiFe/CoFe, or two layered film of NiFe/Co having always an excellent orientation property (111).
申请公布号 JP2000076623(A) 申请公布日期 2000.03.14
申请号 JP19980240670 申请日期 1998.08.26
申请人 NEC CORP 发明人 HAYASHI KAZUHIKO
分类号 G11B5/39;(IPC1-7):G11B5/39 主分类号 G11B5/39
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