发明名称 |
Memory cell with transfer device node in selective polysilicon |
摘要 |
A memory cell is constructed with one electrode of the transfer device extending over a trench capacitor, saving about 6.5% of cell area. Selective polysilicon for a strap seeded from the trench is grown in the same step in which selective single crystal silicon seeded from the substrate is grown for the transfer device. At least a portion of the node diffusion is located in single crystal epitaxial silicon extending over the trench. The process eliminates the need for a separate strap masking step.
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申请公布号 |
US6037210(A) |
申请公布日期 |
2000.03.14 |
申请号 |
US19980049947 |
申请日期 |
1998.03.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LEAS, JAMES M. |
分类号 |
H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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