发明名称 |
Field effect transistors, integrated circuitry, methods of forming field effect transistor gates, and methods of forming integrated circuitry |
摘要 |
A field effect transistor includes a pair of source/drain regions having a channel region positioned therebetween. A gate is positioned operatively proximate the channel region. The gate includes semiconductive material conductivity doped with at least one of a p-type or n-type conductivity enhancing impurity effective to render the semiconductive material electrically conductive, a silcide layer and a conductive diffusion barrier layer effective to restrict diffusion of p-type or n-type conductivity enhancing impurity. The conductive diffusion barrier layer includes TiW<SUB>x</SUB>N<SUB>y</SUB>. Integrated circuitry is also disclosed. |
申请公布号 |
AU5682399(A) |
申请公布日期 |
2000.03.14 |
申请号 |
AU19990056823 |
申请日期 |
1999.08.17 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
CHARLES H DENNISON |
分类号 |
H01L21/28;H01L21/768;H01L23/485;H01L29/423;H01L29/43;H01L29/49;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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