ABRASIVE SLURRY AND POLISHING METHOD

摘要

PROBLEM TO BE SOLVED: To perform chemical mechanical polishing(CMP) of an organic film represented by CFx by using an oxidizing agent for organic film and abrasive slurry containing abrasive grains. SOLUTION: Abrasive slurry 14 containing oxidizing agent and abrasive grains is employed. It may be added with a pH conditioning agent. The oxidizing agent causes chemical reaction on an organic film W1 and includes acid oxidizing agent, e.g. H2O2 (hydrogen peroxide water), Fe(NO3)3 (iron(II) nitrate), KIO3 (potassium iodate), and alkaline oxidizing agent, e.g. KOH (potassium hydroxide), amine based salt such as hydrochloride amine or monoethanol amine, peroxo based compound. The peroxo based compound contains peroxonitrate, peroxocarbonate, peroxo titanic acid, and peroxotitanate.