摘要 |
<p>PROBLEM TO BE SOLVED: To embody an active matrix substrate capable of decreasing the number of production stages and a process for producing the same by simultaneously forming source and drain regions of TFTs and capacitor elements. SOLUTION: In the process for producing the active matrix substrate, a low-concn. first conduction type impurity implantation stage for forming the low-concn. source and drain regions 111, 121, 211, 221 of the TFTs 10 for pixels of an N type and TFTs 20 for driving circuits of an N type is executed before the formation of gate electrodes 15, 25, 35 and second electrodes 45. In the stage, phosphorus is implanted into the silicon films for forming the first electrodes 41 of holding capacitors 40.</p> |