发明名称 PHOTOSEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a miniaturized and thin formed photosemiconductor device. SOLUTION: The infrared rays emitted from the first semiconductor chip 13 are reflected on a reflecting surface 16 forming a reflecting film 18 thereon on a trench 17 to be emitted from the side of a resin sealed body 15. Besides, the coming rays into the side of the resin sealed body 15 are reflected on the reflecting surface 16 forming the reflecting film 18 thereon to be received by the second semiconductor chip 14.</p>
申请公布号 JP2000077707(A) 申请公布日期 2000.03.14
申请号 JP19980242293 申请日期 1998.08.27
申请人 SANYO ELECTRIC CO LTD 发明人 SEKIGUCHI SATOSHI;ISHIKAWA TSUTOMU;KOBORI HIROSHI;KUNII HIDEO;TAKADA KIYOSHI;OCHIAI AKIRA;INOGUCHI HIROSHI
分类号 H01L23/28;H01L23/29;H01L23/31;H01L31/12;(IPC1-7):H01L31/12 主分类号 H01L23/28
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