发明名称 SUBSTRATE SUPPORT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a substrate support device which can easily prevent a substrate from being electrostatically charged. SOLUTION: An elevating/lowering pin 57 is constituted of a supporting main body 58 made of a ceramic and a conductive section 59, which is made of SiC and directly supports a wafer W. Since the wafer W can be made to conduct through the conductive section 59, electrostatic charges can be removed easily from the wafer W. Since the section 59 is formed by sputtering, in addition, the thickness of the section 59 can be made uniform, and at the same time, can be controlled easily. Moreover, the removal of the electrostatic charges from the wafer W also becomes easier, because the amount of the current flowing into the conductive section 59 can be controlled easily. Consequently, the wafer W can be prevented from being charged electrostatically more easily and surely than in conventional cases.</p>
申请公布号 JP2000077507(A) 申请公布日期 2000.03.14
申请号 JP19980263962 申请日期 1998.09.02
申请人 TOKYO ELECTRON LTD 发明人 HARADA KOJI;TAGAMI MITSUHIRO
分类号 H01L21/683;H01L21/027;H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/683
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