| 摘要 |
PROBLEM TO BE SOLVED: To prevent a stepped part from being formed due to mesa etching by a method, wherein a terraced part between grooves cut in a board is turned porous, then a compound semiconductor thin film is grown on the board, the compound semiconductor thin film is removed from the terraced part, the terraced part is oxidized, and an electrode is formed on the compound semiconductor thin film. SOLUTION: An insulating film is patterned on a board as a mask 2, and grooves 3, whose bases are flat, are cut in the board 1 through anisotropic etching using the mask 2. Then, a mask 4 is formed on the base of the groove 3 to turn a terraced part 5 porous after the mask 2 is removed. In succession, the mask 4 is removed, then compound semiconductor thin films such as a buffer layer 6, an active layer 7, and a contact layer 8 are successively grown in this sequence on all the surface of the board 1, then the surface of the board 1 is polished until a terraced part 5 is exposed, and polishing is stopped, before reaching the surface of the contact layer 8 formed on the grooves 3 is exposed. The terraced part 5 is oxidized, and a gate electrode 10 and source/drain electrodes 11 are formed on the compound semiconductor thin film.
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