| 摘要 |
PROBLEM TO BE SOLVED: To obtain a magnetoresistive effect element capable of making a desired size for the area in which magnetization rotates in accordance with an external magnetic field, and to obtain a manufacturing method of the element. SOLUTION: The magnetoresistive effect element is equipped with a magnetic domain control layer 3, 3 in such a manner as to come into contact with the end area E, E of a spin valve film 2. In addition, an electrode layer 4, 4 is arranged so as to cover the end area E, E of the spin valve film 2. The magnetoresistive effect is measured for the center area C where the magnetization of a free magnetizing layer 12 is unfixed by the magnetic domain control layer 3; therefore, regardless of the size of the control power of the magnetic domain control layer 3, the magnetoresistive effect can be measured constantly from the prescribed area (center area C).
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