发明名称 |
Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber |
摘要 |
A method and apparatus for controlling deposit build-up on an interior surface of a dielectric member of a plasma processing chamber. The deposit build-up is controlled by selective ion bombardment of the inner surface by shifting location of a peak voltage amplitude of a voltage standing wave on an antenna such as a flat spiral coil of the plasma processing chamber. A region of high ion bombardment on the interior surface of the dielectric member is displaced by controlling the value of a termination capacitance over a range of values causing regions of low and high ion bombardment to move over the dielectric member in order to effect cleaning thereof.
|
申请公布号 |
US6035868(A) |
申请公布日期 |
2000.03.14 |
申请号 |
US19970828507 |
申请日期 |
1997.03.31 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
KENNEDY, WILLIAM S.;LAMM, ALBERT J.;WICKER, THOMAS E.;MARASCHIN, ROBERT A. |
分类号 |
H01J37/32;H01L21/205;H01L21/302;(IPC1-7):C25F3/14 |
主分类号 |
H01J37/32 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|