| 摘要 |
Fabricating a semiconductor memory device with a capacitor includes forming a first insulating layer on a substrate, covering a transfer transistor, and forming a first conducting layer that penetrates the first insulating layer and is electrically coupled to one of a drain or source region of the transfer transistor. Thereafter, a pillar layer is formed at the periphery of and above the first conducting layer, and a second conducting layer is also formed on sidewalls of the pillar layer. Next, alternately a first and a second film layer are formed at least once over the first conducting layer and the second conducting layer. Then, a second insulating layer is formed above the second film layer. After that, a third conducting layer is formed and then defined such that the first, the second, and the third conducting layers, in combination with the second film layer, form a storage electrode of a charge storage capacitor. After removing the pillar layer, the first film layer and the second insulating layer, a dielectric layer is formed on the exposed surface of the first, the second and the third conducting layers. Finally, a fourth conducting layer is formed over the surface of the dielectric layer resulting in the formation of an opposing electrode of the charge storage capacitor.
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