| 摘要 |
PROBLEM TO BE SOLVED: To obtain a port of objects to be processed which can eliminate adverse influences caused by a very small amount of water contained in stacked insulating films or the like. SOLUTION: When objects W to be processed each having an water-contained insulating film formed thereon are heat-treated in the presence of a gas containing Si in a heat treatment apparatus 32, the objects are supported in an object port 62 in multiple stages with a predetermined pitch. In this case, a moisture removal plate 74 having a polysilicon film formed thereon to be reactive with moisture emitted from the insulating films is disposed between the objects to be processed. As a result, the object port is baked out so that moisture left from the insulating films can react with the active polysilicon film and removed, thus eliminating adverse influences caused by a very small amount of water contained in the stacked insulating films.
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