| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device in which a gate insulating film is protected irrespective of the polarity of charges on the gate electrode. SOLUTION: In this manufacturing method of a semiconductor device, the gate electrode 5 is formed in a first region A surrounded by a field insulating film 2 formed on the surface of a first conductivity type semiconductor substrate 1, via a gate insulating film 3. A second region 7 surrounded by the field insulating film 2 is formed. In the gate insulating film 3 which is simultaneously formed in the first region A and the second region 7, only the gate insulating film 3 formed in the second region 7 is eliminated. After a first conductivity type diffusion layer 10 is formed in the second region 7, a gate electrode 5 containing the first region A and at least a part of the second region 7 is formed, and the first conductivity type diffusion layer 10 is turned into a second conductivity type diffusion layer 15.
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