Method of forming capacitor for semiconductor device using N2O gas

摘要

A method of forming a capacitor for a semiconductor device includes the steps of forming a gate electrode on a semiconductor substrate, forming an impurity diffused region on portions of the semiconductor substrate at sides of the gate electrode, forming a storage node electrode layer contacting one side of the impurity diffused region, forming a thermal nitride film on the storage node electrode layer, forming a Ta2O5 layer on the thermal nitride film, and annealing the Ta2O5 layer using an N2O gas.