CVD precursors and film preparation method using the same

摘要

A CVD precursor that is a precursor in film preparation by the CVD method, comprising a metalorganic compound containing a metal element constituting the film (called "main compound") having blended therewith another organic compound, the other organic compound having a lower vapor pressure than the main compound at a precursor vaporization temperature and when blended with the main compound forming a fusible blend having a lower melting point than the melting point of the main compound. In particular, when the main compound has the structural formula Ma(DPM)2 (Ma being representing an alkaline earth metal), Ma(TMOD)2 or Ma(TMND)2 is blended therewith.