发明名称 SCREENING METHOD OF SEMICONDUCTOR LASER DEVICE
摘要 PROBLEM TO BE SOLVED: To enable semiconductor laser devices that get out of order due to not only initial deterioration but also sudden deterioration to be screened out, by a method wherein the semiconductor laser devices are given heat cycles so as to be alternately put in a state of low temperature and a state of high temperature as a drive current is applied to the semiconductor laser devices. SOLUTION: A screening process is carried out through a manner where semiconductor laser devices are given heat cycles so as to be alternately put in a state of low temperature, and a state of high temperature as a drive current is applied to the semiconductor laser devices as being gradually increased in intensity until a region where no threshold voltage is generated is finished. 20 laser devices subjected to screening carried out under conditions where an ambient temperature is 50 deg.C and an optical output is 100 mW and 10 laser devices subjected to screening carried out under conditions where an ambient temperature is kept at a temperature of 50 deg.C and an optical output is 150 mW are subjected to a long term life test, respectively, All the semiconductor laser devices operate stably without getting out of order at the point when 1100 hours elapse after a long term life test starts. By this setup, semiconductor laser device that get out of order due to sudden deterioration can be effectively screened out through the above screening method.
申请公布号 JP2000077793(A) 申请公布日期 2000.03.14
申请号 JP19980248185 申请日期 1998.09.02
申请人 MITSUBISHI ELECTRIC CORP 发明人 SHIGIHARA KIMIO
分类号 H01L21/66;H01S5/00;(IPC1-7):H01S5/30;H01S3/00 主分类号 H01L21/66
代理机构 代理人
主权项
地址