发明名称 SOLID-STATE IMAGE PICKUP DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To suppress a pseudo signal generated by photoelectric transfer with the light incident in a peripheral region in a photoelectric transfer region through an optical diffraction effect, by allowing a flat surface fringing the periphery of the photoelectric transfer region to be a silicide and specifying a light-incident region of the photoelectric transfer region. SOLUTION: A flat surface fringing the periphery of a photoelectric transfer region 14 is allowed to be a silicide, and the silicide region 32 specifies a light- incidence region (opening region) of the photoelectric transfer region related to a CMOS sensor of this structure. The silicide region 32 is provided on the surface of the photoelectric transfer region 14, so no gap where such light that causes smear is incident as diffracted ray exists. Thus, the incidence of light which causes smear is blocked in the photoelectric transfer region 14.
申请公布号 JP2000077641(A) 申请公布日期 2000.03.14
申请号 JP19980241322 申请日期 1998.08.27
申请人 NEC CORP 发明人 NAGATA TAKESHI;NAKASHIBA YASUTAKA
分类号 B23P21/00;B23Q41/02;B65G1/04;G05B19/418;H01L27/146;H04N5/335;H04N5/359;H04N5/369;H04N5/372;H04N5/374;(IPC1-7):H01L27/146 主分类号 B23P21/00
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