Method for growing dual oxide thicknesses using nitrided oxides for oxidation suppression

摘要

A method for growing dual thickness oxide includes the step of forming a first oxide having a first thickness. A thin layer of the first oxide is transformed into an oxygen diffusion barrier, wherein the oxygen diffusion barrier interfaces at the silicon substrate. A portion of the oxide and oxygen diffusion barrier is removed to expose an area on the silicon substrates. Thereafter, a second oxide is formed on the exposed area of the silicon substrate surface wherein the second silicon dioxide has a second thickness different from the first thickness.