发明名称 MAGNETORESISTIVE EFFECT HEAD AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To prevent the electrostatic breakdown of a magneto resistive effect(MRE) element, in an MRE head, by releasing static electricity caused between the terminals of the MRE element and between the magnetic shields during the manufacture and the use. SOLUTION: The device is such that an MRE head part and an induction head part are integrally laminated on an insulated substrate 10, that a semiconductor 20 is provided between the insulated substrate and the thin film coil of the induction head, and that the semiconductor 20 is designed to have a diode, in which the forward and the reverse directions are parallelly connected, between the terminals of the MRE element 13 and a diode, in which the forward and the reverse directions are serially connected, between the magnetic shields 12, 15. In addition, before the MRE head part is formed, the semiconductor is made on the insulated substrate 10.
申请公布号 JP2000076626(A) 申请公布日期 2000.03.14
申请号 JP19980242684 申请日期 1998.08.28
申请人 HITACHI METALS LTD 发明人 MEGURO SATOSHI;KOBAYASHI TOSHIO;SHIMOE OSAMU
分类号 G11B5/39;(IPC1-7):G11B5/39 主分类号 G11B5/39
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