FORMATION OF RESIST PATTERN AND PRODUCTION OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To precisely form a projecting-type opening suitable for lift-off in resist films. SOLUTION: A lower layer resist film 2 is coated and exposed to light, then a mixing-preventing layer 3 is provided on the lower resist layer 2. Au upper resist layer 4 is coated on the mixing-preventing layer 3 and exposed to light. Afterward, the upper layer resist film 4, the mixing preventing layer 3 and the lower resist layer 2 are successively developed and removed to form an opening 8c having a projecting-type cross section.