发明名称 Substrate inspecting apparatus, substrate inspecting system having the same apparatus and substrate inspecting method
摘要 A substrate inspecting system 60 observes and inspect a semiconductor wafer pattern by irradiating the surface of the semiconductor wafer 11 with electron beams 31, and making a projection unit project in enlargement secondary electrons, reflected electrons and backward scattered electrons generated therefrom in the form of secondary electron beams 32 on an undersurface of an electron beam detecting unit 61, and form an image thereon. The substrate inspecting system 60 includes a parallel-plate type energy filter 33 in a projection system. The present invention discloses a substrate inspecting apparatus capable of detecting a voltage contrast defect on a sample with a high accuracy by separating the secondary electron beams and fetching a secondary electron beam having an energy over a predetermined value, and of quantitatively measuring this defect, a substrate inspecting system having this apparatus, and a substrate inspecting method.
申请公布号 US6038018(A) 申请公布日期 2000.03.14
申请号 US19990311271 申请日期 1999.05.14
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YAMAZAKI, YUICHIRO;MIYOSHI, MOTOSUKE
分类号 G01B15/00;G01N21/95;G01N23/225;G01R31/302;G03F1/08;G03F1/84;G03F1/86;H01J37/22;H01J37/28;H01L21/66;(IPC1-7):G01N21/00 主分类号 G01B15/00
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