| 摘要 |
PROBLEM TO BE SOLVED: To uniformly form the film thickness of a resist film that is formed on the surface of a wafer over the entire surface by supplying a first amount of coating agent onto a substrate to be treated that rotates at a constant speed and then supplying a second amount of coating agent onto the rotating substrate to be treated. SOLUTION: A resist nozzle 60 is moved to a position nearly directly above the center of a wafer W before rotation being retained by a spin chuck 51, and a specific amount of solvent is dripped from the resist nozzle 60 to thinly cover the entire upper surface of the wafer while the wafer W including the spin chuck 51 is rotated by a motor 52. Then, the rotation of the wafer W including the spin chuck 51 is accelerated to a specific speed for rotating at a constant speed, and then the first, first amount of resist discharge is applied to the wafer W from the resist nozzle 60 via a resist supply pipe 66, and the second, second amount of resist discharge is applied to the wafer W by the resist 60 after a specific amount of time passes. |
