发明名称 |
Method for making cylinder-shaped capacitors for dynamic random access memory |
摘要 |
A method for making cylinder-shaped stacked capacitors for DRAMs is described. A planar first insulating layer is formed over device areas. An etch-stop layer, a second insulating layer, and a polish-back endpoint detect layer are deposited in which cylinder-shaped capacitors with node contacts are formed. First openings for node contacts are etched in the polish-back and second insulating layers to the etch-stop layer aligned over the device areas. Wider second openings, aligned over the first openings, are etched through the polish-back layer, and also removes the etch-stop layer in the first openings. The second insulating layer in the second openings is etched to the etch-stop layer, while the first insulating layer is etched in the first openings for node contact openings. A doped first polysilicon layer is deposited and polished back to the polish-back detect layer to form concurrently the node contacts in the first openings and bottom electrodes in the second openings. The second insulating layer is removed by a wet etch. A thin dielectric layer is deposited, and top electrodes are formed from a second polysilicon layer. The etch-stop layer provides better control of the etching depth for the first and second openings that improves reliability while providing a simple manufacturing process.
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申请公布号 |
US6037213(A) |
申请公布日期 |
2000.03.14 |
申请号 |
US19980089550 |
申请日期 |
1998.06.03 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
SHIH, CHENG-YEH;WU, CHENG-MING;LEE, YU-HUA |
分类号 |
H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8242 |
代理机构 |
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地址 |
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