| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for quickly extracting suitable parameters from a diffusion model in computer simulation of semiconductor manufacturing process. SOLUTION: Multiplicities of sorts of parameters to be extracted are classified from physically basic ones to ones in stronger model dependency and weak in physical ground into a plurality of groups (first group G1 of basic parameters, a second group G2 of parameters having a reactive paired relationship of impurity and point defect, a third group G3 of parameters having relations in transiently increased/decreased diffusion, and a fourth group G4 of parameters having an impurity cluster relationship), an extraction order of the parameters classified in each group is determined, and the parameters are extracted from each group on the basis of the extraction order. Of the parameters extracted based on the determined extraction order, when a following parameter is made difficult to be extracted, the parameters extracted immediately before it are changed to parameters of the next order.
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