| 摘要 |
PROBLEM TO BE SOLVED: To make a plane package containable IGBT(insulation gate type bipolar transistor) chips of which turn off destruction resistance quantity is large. SOLUTION: Switching characteristics of each IGBT chip are measured in a switching characteristic measuring process and the IGBT chips within a reference value is selected. Among the selected IGBT chips in a td(off) (delay time in turn off operation) selection process, those with scattering of the td(off) within 10% are selected. The static characteristics of the selected IGBT chips are measured in a static characteristic process and the IGBT chips within a reference value are selected. In a combining process, the IGBT chips having switching characteristics and static characteristics within reference values and the scattering of td(off) within 10% are combined. In an assembling process, a plurality of combined IGBT chips are contained in a plane package.
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