发明名称 |
CIRCUIT FOR GENERATION OF INTERNAL SUPPLYING VOLTAGE |
摘要 |
FIELD: electrical engineering. SUBSTANCE: device has voltage scaling circuit 80, which has first alternating resistor with higher resistance as load member, and second alternating resistor with lower resistance as excitation member. When temperature increases, resistance of first resistor is increased thus decreasing current that runs through it. Output of voltage scaling circuit 80 is connected to comparison unit 60 which provides possibility to increase internal supply voltage in output circuit 70 in response to increased temperature. EFFECT: increased stability of voltage applied to semiconductor memory unit independently from temperature alterations. 4 cl, 7 dwg
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申请公布号 |
RU2146388(C1) |
申请公布日期 |
2000.03.10 |
申请号 |
SU19915001410 |
申请日期 |
1991.08.29 |
申请人 |
SAMSUNG EHLEKTRONIKS KO., LTD. |
发明人 |
DZIN TAE-DZE;DZEON DZOON-JANG |
分类号 |
G06F1/26;G05F1/46;G05F1/56;G05F1/567;G05F3/02;G05F3/24;G05F3/30;G11C5/14;G11C11/407;G11C11/4074;G11C11/413;H03F1/30;H03K19/00;(IPC1-7):G05F1/56 |
主分类号 |
G06F1/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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