| 摘要 |
<p>A method for forming a metal film for use in semiconductor devices on a substrate. A catalyst metal layer for facilitating formation of a metal film is formed first on a substrate using thermal chemical vapor deposition. Then, at least one source of the metal film is prepared as a gas phase. The metal film is formed on the catalyst metal layer by applying the gas phase source to the catalyst metal layer. According to the present invention, a metal film of uniform thickness can be formed on an uneven substrate surface or on a hole with a high aspect ratio.</p> |
