Photodetector, especially a photodiode array, is produced by bonded substrate thinning to allow back face radiation transmission to a photosensitive region

摘要

Photodetector production comprises back face thinning a front face wired substrate (1), bonded to a second substrate, to allow back face radiation transmission to a photosensitive region. Photodetector production process comprises: (a) preparing a first substrate (1) with a photosensitive region between two laterally spaced conductive regions (4, 5) on its front face; (b) carrying out electrical contacting and wiring of the conductive regions; (c) bonding the front face of the first substrate to a second substrate; and (d) back face thinning the first substrate to allow radiation transmission from the back face to the photosensitive region. Preferred Features: The first substrate (1) may be an SOI substrate and the second substrate consists of single crystal silicon, polysilicon, quartz or glass.